NDH8521C Fairchild Semiconductor, NDH8521C Datasheet - Page 7

• Manufacturer Part Number: NDH8521C
• Description: Dual N & P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics: P-Channel
1 5 0 0
1 0 0 0
6 0 0
4 0 0
2 0 0
1 0 0
Figure 18. P-Channel Breakdown Voltage
5 0
Figure 22. P-Channel Transconductance Variation
12
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1.1
9
6
3
0
0 .1
Figure 20. P-Channel Capacitance Characteristics.
0
1
-50
V
DS
I
D
Variation with Temperature.
with Drain Current and Temperature.
f = 1 MHz
V
= -250µA
= -5V
GS
0 .2
-25
= 0 V
-3
-V
DS
T , JUNCTION TEMPERATURE (°C)
0.5
0
J
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
25
1
-6
50
2
-9
75
T = -55°C
5
J
125°C
25°C
100
1 0
-12
C iss
C oss
C rss
125
2 0
150
3 0
-15
(continued)
0 . 0 0 0 1
1 0
0.001
8
6
4
2
0
0.01
0
0.5
0.1
Figure 19. P-Channel Body Diode Forward
1 0
I
3
1
D
0.2
Figure 21. P-Channel Gate Charge Characteristics.
= -2.7A
V
Voltage Variation with Current and
Temperature
GS
= 0V
4
-V
0.4
SD
, BODY DIODE FORWARD VOLTAGE (V)
Q
T = 125°C
g
J
, GATE CHARGE (nC)
8
.
0.6
25°C
1 2
-55°C
0.8
V
DS
=-5V
1 6
-10V
1
-15V
NDH8521C Rev.C
1.2
2 0