FDN5632N-F085 Fairchild Semiconductor, FDN5632N-F085 Datasheet - Page 5

• Manufacturer Part Number: FDN5632N-F085
• Description: N-channel Logic Level Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

FDN5632N_F085 Rev. A (W)
Typical Characteristics
Figure 5.
0.001
0.01
Figure 9. Normalized Drain to Source On
0.1
12
30
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
9
6
3
0
1
Resistance vs Junction Temperature
0.01
Figure 7.
0
-80
OPERATION IN THIS
AREA MAY BE
LIMITED BY
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
Forward Bias Safe Operating Area
V
DS
DS
-40
, DRAIN TO SOURCE VOLTAGE (V)
T
, DRAIN TO SOURCE VOLTAGE (V)
0.1
J
, JUNCTION TEMPERATURE
Saturation Characteristics
1
r DS(on)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
V
V
V
GS
GS
GS
GS
GS
0
= 6V
= 10V
= 5V
= 4.5V
= 4V
1
SINGLE PULSE
T
T
2
µ
40
A
J
s
= MAX RATED
= 25
o
C
10
80
µ
3
s
V
V
(
GS
V
o
GS
I
D
120
C
GS
= 3.5V
= 1.7A
)
100 300
= 3V
100ms
10ms
100us
1ms
1s
DC
= 10V
4
160
5
Figure 8. Drain to Source On-Resistance
200
150
100
1.4
1.2
1.0
0.8
0.6
0.4
12
Figure 10. Normalized Gate Threshold
50
9
6
3
0
Variation vs Gate to Source Voltage
0
Figure 6.
-80
0
Voltage vs
2
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DD
V
T
= 5V
V
GS
-40
J
GS
, JUNCTION TEMPERATURE
, GATE TO SOURCE VOLTAGE
1
, GATE TO SOURCE VOLTAGE (V)
I
D
4
Transfer Characteristics
T
=
Junction Temperature
J
1.7A
= 150
0
T
J
2
= 25
o
C
µ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
40
s
o
6
C
T
T
J
J
= 150
= 25
3
80
o
o
C
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C
T
(
V
I
D
8
o
J
GS
C
= 250 µ
= -55
4
(
)
120
=
V
V
)
o
DS
µ
C
A
s
160
10
5