NDB6020 Fairchild Semiconductor, NDB6020 Datasheet - Page 5

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NDB6020

Manufacturer Part Number
NDB6020
Description
N-channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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Typical Electrical Characteristics
V
Figure 11. Switching Test Circuit
Figure 9. Capacitance Characteristics
Figure 7. Breakdown Voltage Variation with
GEN
3 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
1 .1 5
1 .0 5
0 .9 5
5 0 0
2 0 0
1 0 0
1 .1
0 .9
1
-5 0
0 .1
Temperature
I
R
D
=250µA
-2 5
GEN
R
f = 1 MHz
V
GS
GS
0
V
T
= 0V
DS
V
J
.
, DRAIN TO SOURCE VOLTAGE (V)
IN
, JUNCTION TEM PERATURE (°C)
0 .5
2 5
G
5 0
1
D
S
V
7 5
DD
.
R
1 0 0
L
DUT
.
1 2 5
5
(continued)
1 5 0
V
1 0
OUT
C iss
C oss
C rss
1 7 5
2 0
V
t
V
OUT
d (on)
8
6
4
2
0
Figure 10. Gate Charge Characteristics
0 .0001
IN
Figure 12. Switching Waveforms
0 .001
0
0 .01
10%
I
0 .5
0 .1
2 0
Figure 8. Body Diode Forward Voltage
D
5
1
0
= 35A
V
GS
Variation with Current and
Temperature
=0V
t
50%
o n
8
10%
0 .2
V
SD
, BODY DIODE FORW A RD VOLTAGE (V)
t
90%
PULSE W IDTH
r
Q
g
T = 125° C
J
0 .4
1 6
, GATE CHARGE (nC)
.
25°C
t
d (off)
-55° C
0 .6
2 4
50%
0 .8
.
90%
V
t
DS
10%
off
90%
= 1 0 V
3 2
.
20V
1
INVERTED
t
NDP6020 Rev.C
f
15V
1 .2
4 0

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