NDB608A Fairchild Semiconductor, NDB608A Datasheet
NDB608A
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NDB608A Summary of contents
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... NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially ...
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... ALL 100 ALL -100 ALL 2 2.9 4 1.4 2.3 3.2 NDP608A 0.031 0.042 NDP608AE NDB608A NDB608AE 0.05 0.08 NDP608B 0.045 NDP608BE NDB608B 0.09 NDB608BE NDP608A 36 NDP608AE NDB608A NDB608AE NDP608B 32 NDP608BE NDB608B NDB608BE ALL 10 17.5 ALL 1370 1800 ALL 390 500 ALL 140 200 NDP608.SAM Units µ ...
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... I rr THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA Notes: 1. NDP608A/608B and NDB608A/608B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0 25°C unless otherwise noted) C Conditions (Note ...
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Typical Electrical Characteristics 120 V = 20V GS 100 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 2 18A 10V GS 2 1.5 1 ...
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Typical Electrical Characteristics 105 I = 250µA D 100 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature. 3000 2000 1000 300 200 ...
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Typical Electrical Characteristics 10V -55° 25° 125° DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature. ...