NDB710A Fairchild Semiconductor, NDB710A Datasheet - Page 4
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NDB710A
Manufacturer Part Number
NDB710A
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDB710A.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDB710A
Manufacturer:
MOT/ON
Quantity:
12 500
Typical Electrical Characteristics
6 0
5 0
4 0
3 0
2 0
1 0
0
120
100
2.5
1.5
0.5
2
80
60
40
20
2
1
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
0
-50
Figure 1. On-Region Characteristics.
0
V
V
-25
I
with Temperature.
D
GS
DS
= 15A
3
= 10V
= 10V
V
GS
0
V
2
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
DS
V
J
GS
, DRAIN-SOURCE VOLTAGE (V)
25
= 20V
4
50
1 2
4
75
1 0
5
T = -55°C
J
8.0
100
7.0
6
125
6
25
6.0
150
5.0
125
175
7
8
1.2
1.1
0.9
0.8
0.7
0.6
0.5
2.5
1.5
0.5
2.5
1.5
0.5
1
2
1
Figure 4. On-Resistance Variation with
-50
Figure 6. Gate Threshold Variation
Figure 2. On-Resistance Variation with
2
1
0
0
V
-25
Drain Current and Temperature.
with Temperature.
Gate Voltage and Drain Current.
GS
V
2 0
GS
= 5V
20
= 10V
0
T , JUNCTION TEMPERATURE (°C)
J
2 5
4 0
40
I
I
D
D
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
6.0
5 0
T = 125°C
J
6 0
60
7 5
1 0 0
80
8 0
7.0
25°C
V
I
1 2 5
D
DS
= 250µA
100
1 0 0
= V
8.0
1 0
-55°C
1 5 0
1 2
NDP710.SAM
GS
2 0
120
1 2 0
1 7 5