FQB32N20C Fairchild Semiconductor, FQB32N20C Datasheet - Page 4

• Manufacturer Part Number: FQB32N20C
• Description: Fqb32n20c/fqi32n20c 200v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
-100
10
10
10
10
Figure 9. Maximum Safe Operating Area
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
※
1. T
2. T
3. Single Pulse
Notes :
-50
C
J
= 150
= 25
o
C
o
C
Operation in This Area
is Limited by R
T
J
, Junction Temperature [
V
vs Temperature
DS
0
, Drain-Source Voltage [V]
1 0
1 0
1 0
10
DS(on)
-1
-2
1
1 0
0
- 5
50
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
0 .2
0 .1
(Continued)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
o
1 ms
C]
-4
※
s in g le p u ls e
100
1. V
2. I
10
Notes :
t
D
2
1
GS
= 250 µA
µ
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
150
= 0 V
s
1 0
200
-3
1 0
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
25
20
15
10
5
0
-100
25
※
Figure 10. Maximum Drain Current
1 0
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r , D = t
3 . T
N o t e s :
- 1
P
DM
θ
J M
J C
-50
( t) = 0 . 8 0
- T
50
C
vs Case Temperature
= P
T
t
1
J
T
D M
, Junction Temperature [
t
vs Temperature
2
C
1 0
0
℃
, Case Temperature [ ]
* Z
/W M a x .
0
1
/t
θ
75
J C
2
( t)
50
1 0
100
1
100
℃
o
C]
※
125
1. V
2. I
150
Notes :
D
GS
= 14 A
= 10 V
200
Rev. A, March 2004
150