FQB7N65C Fairchild Semiconductor, FQB7N65C Datasheet

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FQB7N65C

Manufacturer Part Number
FQB7N65C
Description
Fqb7n65c 650v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FQB7N65CTM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
FQB7N65C Rev. A
FQB7N65C
650V N-Channel MOSFET
Features
• 7A, 650V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 1.4Ω @V
GS
G
= 10 V
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
Parameter
D
FQB Series
Parameter
2
-PAK
D
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FQB7N65C
-55 to +150
FQB7N65C
S
4.45
± 30
17.3
1.38
650
212
173
300
4.5
D
28
7
7
0.75
62.5
QFET
September 2006
www.fairchildsemi.com
Units
W/°C
Units
V/ns
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQB7N65C Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FQB7N65C Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... DD G ≤ 7A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQB7N65C Rev. A Package Reel Size D2-PAK 330mm T = 25°C unless otherwise noted C Test Conditions = 250 µ ...

Page 3

... Figure 5. Capacitance Characteristics 2000 1600 C iss 1200 C oss 800 C 400 rss Drain-Source Voltage [V] DS FQB7N65C Rev. A Figure 2. Transfer Characteristics Notes : ※ 1. 250µs Pulse Test ℃ Figure 4. Body Diode Forward Voltage 1 10 ...

Page 4

... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on Drain-SourceVoltage[V] DS Figure 11. Transient Thermal Response Curve FQB7N65C Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 100 150 200 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQB7N65C Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQB7N65C Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 ±0.10 1.27 2.54 TYP 10.00 FQB7N65C Rev -PAK ±0.20 ±0.10 0.80 2.54 TYP ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 ±0.15 0.10 ±0.20 2.40 +0.10 0.50 –0.05 ±0.20 10.00 (8.00) (4.40) (2XR0.45) ±0.10 0.80 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQB7N65C Rev. A OCX™ OCXPro™ ® OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ ...

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