FQB3P20 Fairchild Semiconductor, FQB3P20 Datasheet - Page 3

• Manufacturer Part Number: FQB3P20
• Description: Fqb3p20 / Fqi3p20 200v P-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
400
300
200
100
10
10
10
10
-1
0
1
0
10
10
8
6
4
2
0
0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : -5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
2
-V
-V
DS
DS
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
10
10
D
0
, Drain Current [A]
0
V
GS
C
C
C
oss
iss
rss
= - 20V
4
V
GS
= - 10V
C
C
C
iss
oss
rss

Notes :
= C
= C
= C
1. 250  s Pulse Test
2. T
10

Note : T
10
6
gs
gd
ds
1
1
C
+ C
+ C
= 25 
gd
gd
(C

Notes :
J
ds
1. V
2. f = 1 MHz
= 25 
= shorted)
GS
= 0 V
8
10
10
10
10
10
10
12
10
-1
-1
1
0
1
0
8
6
4
2
0
0.4
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
150

1
0.8
Variation vs. Source Current
4
25

-V
-V
2
Q
and Temperature
GS
SD
25

1.2
G
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
150

V
DS
V
DS
V
= -160V
3
DS
= -100V
= -40V
1.6
6
4
-55

2.0

Notes :

Notes :
1. V
2. 250  s Pulse Test
5
1. V
2. 250  s Pulse Test

Note : I
8
DS
GS
= -40V
= 0V
2.4
D
6
= -2.8 A
Rev. A, April 2000
2.8
10
7