FQB4P25 Fairchild Semiconductor, FQB4P25 Datasheet - Page 4

• Manufacturer Part Number: FQB4P25
• Description: Fqb4p25 / Fqi4p25 250v P-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1 0
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
o
D = 0 . 5
0 .0 2
0 .0 5
0 .0 1
C
o
0 .2
0 .1
C
50
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
- 4
C]
s in g le p u ls e
10
1 ms
※ Note :
1. V
2. I
t
2
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
100 s
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
Figure 10. Maximum Drain Current
1 0
- 1
θ J C
J M
P
-50
DM
- T
( t ) = 1 . 6 7 ℃ /W M a x .
50
C
= P
vs. Case Temperature
T
vs. Temperature
D M
J
T
t
, Junction Temperature [
1
C
t
0
, Case Temperature [ ℃ ]
1 0
* Z
2
1
0
θ J C
/t
75
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -2.0 A
= -10 V
Rev. A2, December 2000
200
150