TN3725A Fairchild Semiconductor, TN3725A Datasheet

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TN3725A

Manufacturer Part Number
TN3725A
Description
Npn Switching Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.TN3725A.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TN3725A
Manufacturer:
FSC
Quantity:
425
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
, T
JC
JA
NPN Switching Transistor
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
This device is designed for high speed core driver applications
up to collector currents of 1.0 A. Sourced from Process 25.
Absolute Maximum Ratings
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
B E
Derate above 25 C
TN3725A
Characteristic
TO-226
Parameter
Effective 4 Die
Each Die
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
SOIC-16
E
MMPQ3725
B
TN3725A
E
125
B
1.0
8.0
50
E
B
C
E
Max
C
B
-55 to +150
C
Value
MMPQ3725
C
6.0
1.2
40
60
C
125
240
1.0
8.0
C
C
C
Units
mW/ C
Units
C/W
C/W
C/W
C/W
V
V
V
A
C
W

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TN3725A Summary of contents

Page 1

... Derate above Thermal Resistance, Junction to Case JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation MMPQ3725 TO-226 SOIC- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted TN3725A 1.0 8.0 50 125 Effective 4 Die Each Die ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Emitter Breakdown Voltage (BR)CES V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Collector Cutoff Current CES ON CHARACTERISTICS ...

Page 3

DC Typical Characteristics Typical Pulsed Current Gain vs Collector Current 200 150 125 º ° C 100 - 40 º 0.001 0.01 0 COLLECTOR CURRENT ( Base-Emitter ...

Page 4

AC Typical Characteristics Input/Output Capacitance vs. Reverse Bias Switching Time vs. Collector Current Switching Times vs. Ambient Temperature NPN Switching Transistor Contours of Constant Bandwidth Product (f Turn On / Turn Off Times vs. Collector Current Delay Time vs. Turn ...

Page 5

AC Typical Characteristics Rise Time vs. Collector and Turn On Base Currents Storage Time vs. Turn On and Turn Off Base Currents NPN Switching Transistor (continued) Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn ...

Page 6

AC Typical Characteristics Fall Time vs. Turn On and Turn Off Base Currents 1 0.75 0.5 0. Test Circuit and 1 ...

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