HY27UH164G2M Hynix Semiconductor, HY27UH164G2M Datasheet - Page 17

• Manufacturer Part Number: HY27UH164G2M
• Description: (HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.1 / Feb. 2005
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage
Level
Output Low Voltage Level
Output Low Current
(RB#)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (1.7V - 1.95Volt & 2.7V - 3.6V)
Output Load (3.0V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Symbol
(RB#)
I
I
I
I
I
V
V
V
I
I
V
I
CC1
CC2
CC3
CC4
CC5
LO
OL
OH
OL
LI
IH
IL
Table 9: DC and Operating Characteristics
Test Conditions
V
CE#=Vcc-0.2,
V
OUT
I
I
WP#0V/Vcc
IN
I
I
WP#0/Vcc
I
OH
OH
t
CE#=V
V
V
CE#=V
OL
OL
OUT
RC
Table 10: AC Conditions
=0 to 3.6V
OL
OL
=0 to 3.6V
=-100uA
=-400uA
=2.1mA
=100uA
=50ns,
=0.1V
=0.4V
=0mA
-
-
-
-
4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
IH
IL
1 TTL GATE and CL=30pF
,
,
0V to Vcc
Vcc-0.4
Vcc-0.1
1.8Volt
Vcc / 2
Min
-0.3
5ns
3
-
-
-
-
-
-
-
-
-
-
-
-
1.8Volt
Typ
15
15
15
40
4
-
-
-
-
-
-
-
-
-
-
HY27UH(08/16)4G2M Series
HY27SH(08/16)4G2M Series
Vcc+0.
Value
± 40
± 40
Max
200
1.5
0.4
0.1
30
30
30
3
-
-
-
-
-
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
Min
-0.3
2.4
2
8
-
-
-
-
-
-
-
-
-
-
-
0.4V to 2.4V
3.3Volt
3.3Volt
Typ
20
20
20
40
10
1.5V
-
-
-
-
-
-
-
-
-
5ns
Preliminary
Vcc+0
± 40
± 40
Max
200
1.5
0.8
0.4
40
40
40
.3
-
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
V
V
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