HY27UH164G2M Hynix Semiconductor, HY27UH164G2M Datasheet - Page 8

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HY27UH164G2M

Manufacturer Part Number
HY27UH164G2M
Description
(HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
Rev 0.1 / Feb. 2005
NOTE:
1. With the CE# don’t care option CE# high during latency time does not stop the read operation
CLE
H
H
L
L
L
L
L
X
X
X
X
ALE
H
H
L
L
L
L
L
X
X
X
X
CE#
L
H
(1)
X
X
X
L
L
L
L
L
L
Rising
Rising
Rising
Rising
Rising
WE#
H
H
X
X
X
X
Table 6: Mode Selection
4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
Falling
RE#
H
H
H
H
H
H
X
X
X
X
0V/Vcc
WP#
H
H
H
H
H
X
X
X
X
L
HY27UH(08/16)4G2M Series
HY27SH(08/16)4G2M Series
Read Mode
Write Mode
Data Input
Sequential Read and Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand By
Command Input
Address Input(5 cycles)
Command Input
Address Input(5 cycles)
MODE
Preliminary
8

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