HY27UH164G2M Hynix Semiconductor, HY27UH164G2M Datasheet - Page 18

• Manufacturer Part Number: HY27UH164G2M
• Description: (HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.1 / Feb. 2005
Input / Output Capacitance (1)
Input Capacitance(1)
Note: 1. For the stacked devices version the Input Capacitance is <TBD> and the I/O capacitance is <TBD>
Program Time
Dummy Busy Time for Cache Program
Dummy Busy Time for the Lock or Lock-tight Block
Number of partial Program Cycles in the same page
Block Erase Time
Item
Table 12: Program / Erase Characteristics
Table 11: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
C
C
I/O
IN
4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
Spare Array
Main Array
Test Condition
V
V
IN
IL
=0V
=0V
Symbol
HY27UH(08/16)4G2M Series
HY27SH(08/16)4G2M Series
t
t
t
t
NOP
NOP
PROG
CBSY
BERS
LBSY
Min
Min
-
-
-
-
-
-
-
-
Typ
300
3
5
2
-
-
Max
40
40
Preliminary
Max
700
700
10
4
4
3
Unit
Cycles
Cycles
pF
pF
Unit
ms
us
us
us
18