ISL9N306AP3 Fairchild Semiconductor, ISL9N306AP3 Datasheet - Page 3

• Manufacturer Part Number: ISL9N306AP3
• Description: N-channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
1000
2000
100
0
50
0
0.01
10
0.1
1
2
-5
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
25
Ambient Temperature
V
GS
T
= 10V
50
C
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
10
V
GS
75
-4
10
= 5V
-4
SINGLE PULSE
100
Figure 4. Peak Current Capability
125
o
C)
10
10
-3
-3
150
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
90
75
60
45
30
15
0
25
50
10
Case Temperature
10
T
-1
-1
C
, CASE TEMPERATURE (
V
75
GS
NOTES:
DUTY FACTOR: D = t
PEAK T
= 4.5V
J
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
= P
C
I = I
= 25
DM
25
o
10
x Z
10
C
0
P
0
o
125
C DERATE PEAK
JA
DM
1
/t
175 - T
o
x R
2
C)
150
V
GS
JA
t
1
C
= 10V
150
+ T
Rev. B, February 2002
t
2
A
10
10
175
1
1