MT58L64V36P Micron Semiconductor, MT58L64V36P Datasheet - Page 15
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MT58L64V36P
Manufacturer Part Number
MT58L64V36P
Description
(MT58LxxxxP) 2Mb SRAM
Manufacturer
Micron Semiconductor
Datasheet
1.MT58L64V36P.pdf
(20 pages)
NOT RECOMENDED FOR NEW DESIGNS
SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all in-
puts except ZZ become gated inputs and are ignored.
NOTE: 1. This parameter is sampled.
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L128L18P_C.p65 – Rev. C, Pub. 11/02
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Outputs (Q)
ALL INPUTS
(except ZZ)
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
SNOOZE MODE is a low-current, “power-down”
I
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t
ZZI
t
I
ZZ
ISB2Z
SNOOZE MODE WAVEFORM
CONDITIONS
ZZ ≥ V
IH
15
PIPELINED, SCD SYNCBURST SRAM
High-Z
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, I
after the setup time
operation pending when the device enters SNOOZE
MODE is not guaranteed to complete successfully.
Therefore, SNOOZE MODE must not be initiated until
valid pending operations are completed.
The ZZ pin is an asynchronous, active HIGH input
2Mb: 128K x 18, 64K x 32/36
SYMBOL
t
t
I
t
RZZI
t
RZZ
SB
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ZZI
ZZ
2Z
2(
MIN
t
0
KC)
t
ZZ is met. Any READ or WRITE
DESELECT or READ Only
t
RZZI
2(
2(
MAX
10
t
t
KC)
KC)
t
RZZ
SB
UNITS
2
mA
ns
ns
ns
ns
Z
©2002, Micron Technology, Inc.
is guaranteed
DON’T CARE
NOTES
1
1
1
1