MT58V512V36D Micron Technology, MT58V512V36D Datasheet - Page 2
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MT58V512V36D
Manufacturer Part Number
MT58V512V36D
Description
(MT58xxxx) 16Mb SYNCBURST SRAM
Manufacturer
Micron Technology
Datasheet
1.MT58V512V36D.pdf
(34 pages)
NOTE: Functional block diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
SA0, SA1, SAs
SA0, SA1, SAs
ADSC#
ADSP#
MODE
BWd#
BWb#
ADSC#
BWc#
BWa#
BWE#
MODE
ADSP#
ADV#
BWb#
BWa#
ADV#
BWE#
GW#
CE2#
GW#
CE2#
OE#
CLK
OE#
CE#
CE2
CLK
CE#
CE2
detailed information.
20
19
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
ADDRESS
REGISTER
BYTE “b”
REGISTER
BYTE “a”
ENABLE
BYTE “d”
BYTE “b”
BYTE “c”
BYTE “a”
REGISTER
ENABLE
REGISTER
ADDRESS
COUNTER AND
CLR
BINARY
LOGIC
FUNCTIONAL BLOCK DIAGRAM
FUNCTIONAL BLOCK DIAGRAM
PIPELINED
20
2
ENABLE
PIPELINED
Q1
Q0
19
ENABLE
CLR
SA0-SA1
COUNTER
BINARY
SA0-SA1
18
17
Q1
Q0
512K x 32/36
SA0'
SA1'
SA0'
SA1'
1 MEG x 18
9
9
9
9
9
9
20
WRITE DRIVER
WRITE DRIVER
19
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
BYTE “b”
BYTE “a”
BYTE “d”
BYTE “b”
PIPELINED, DCD SYNCBURST SRAM
BYTE “c”
BYTE “a”
2
16Mb: 1 MEG x 18, 512K x 32/36
9
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
9
9
9
9
1 Meg x 9 x 2
MEMORY
512K x 8 x 4
512K x 9 x 4
ARRAY
MEMORY
ARRAY
(x32)
(x36)
18
36
SENSE
AMPS
SENSE
AMPS
18
36
REGISTERS
2
OUTPUT
4
REGISTERS
OUTPUT
18
18
36
36
OUTPUT
BUFFERS
BUFFERS
OUTPUT
©2000, Micron Technology, Inc.
E
E
ADVANCE
REGISTERS
INPUT
REGISTERS
18
INPUT
36
DQPa
DQPb
DQPd
DQs
DQPa
DQPb
DQPc
DQs