MT58V512V36D Micron Technology, MT58V512V36D Datasheet - Page 34
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MT58V512V36D
Manufacturer Part Number
MT58V512V36D
Description
(MT58xxxx) 16Mb SYNCBURST SRAM
Manufacturer
Micron Technology
Datasheet
1.MT58V512V36D.pdf
(34 pages)
REVISION HISTORY
Changed FBGA capacitance values, Rev. 7/00, ADVANCE ............................................................................... Aug/8/00
C
C
C
Removed Industrial Temperature references, Rev. 7/00, ADVANCE .............................................................. July/24/00
Added 165-pin FBGA package, Rev. 7/00, ADVANCE .................................................................................... Jun/28/00
Added FBGA part marking references
Removed 119-pin PBGA and references
Added Note: “IT available for -8.5 and -10 speed grades”
Change Pin 14 to NC from V
Added note: ZZ has internal pull-down
Updated Boundary Scan Order, Rev. 3/00, ADVANCE ..................................................................................... Apr/6/00
Added ADVANCE status, Rev. 1/00, ADVANCE .............................................................................................. Jan/18/00
MT58L1MY18D, Rev. 11/99, ADVANCE ........................................................................................................ Nov/11/99
Added BGA JTAG functionality
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
I
O
CK
; TYP 2.5 pF from 4 pF; MAX 3.5 pF from 5 pF
; TYP 4 pF from 6 pF; MAX 5 pF from 7 pF
; TYP 2.5 pF from 5 pF; MAX 3.5 pF from 6 pF
DD
, Rev. 4/00, ADVANCE .................................................................................. Apr/13/00
34
PIPELINED, DCD SYNCBURST SRAM
16Mb: 1 MEG x 18, 512K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
ADVANCE