2N339 Fairchild Semiconductor, 2N339 Datasheet

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2N339

Manufacturer Part Number
2N339
Description
NPN General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet

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1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
, T
*
Thermal Characteristics
JC
JA
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
B
Derate above 25 C
C
E
2N3390
2N3391
2N3391A
2N3392
2N3393
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
2N3390 / 3391/A / 3392 / 3393
Discrete POWER & Signal
Max
83.3
625
200
5.0
-55 to +150
Value
500
5.0
25
25
Technologies
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C
3390-93, Rev B

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2N339 Summary of contents

Page 1

... Derate above 25 C Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N3390 / 3391/A / 3392 / 3393 Discrete POWER & Signal Technologies Value Units 5.0 V 500 ...

Page 2

... CE C 2N3390 2N3391/A 2N3392 2N3393 1.0 MHz 2 1.0 kHz 2N3390 2N3391/A 2N3392 2N3393 100 500 , 2N3391A only 15.7 kHz W 2.0% (continued) Min Max Units 5.0 V 100 nA 100 nA 400 800 250 500 150 300 90 180 2 ...

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