IRF610B Fairchild Semiconductor, IRF610B Datasheet - Page 4

• Manufacturer Part Number: IRF610B
• Description: 200V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
10
10
1.2
1.1
1.0
0.9
0.8
10
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-1
-2
1
0
Figure 7. Breakdown Voltage Variation
10
25
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
vs Temperature
V
J
, Junction Temperature [
T
DS
0
C
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
for IRF610B
, Case Temperature [ ℃ ]
※ Notes :
10
1. T
2. T
3. Single Pulse
1
75
C
J
= 150
= 25
o
C
o
50
DS(on)
C
DC
100
100
10 ms
(Continued)
o
C]
1 ms
※ Notes :
10
1. V
2. I
2
D
G S
= 250 μ A
125
= 0 V
150
100 s
200
150
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-100
1
0
10
0
Figure 8. On-Resistance Variation
-50
V
T
DS
J
, Junction Temperature [
for IRFS610B
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
10
1. T
2. T
3. Single Pulse
1
C
J
= 25
= 150
o
C
o
C
50
DS(on)
DC
100 ms
100
o
10 ms
C]
10
1 ms
2
※ Notes :
1. V
2. I
150
D
GS
= 1.65 A
= 10 V
Rev. A1, December 2002
200