IRFI510 Fairchild Semiconductor, IRFI510 Datasheet - Page 3

• Manufacturer Part Number: IRFI510
• Description: Advanced Power MOSFET
• Manufacturer: Fairchild Semiconductor

POWER MOSFET
10
10
10
0 . 8
0 . 6
0 . 4
0 . 2
0 . 0
3 5 0
2 8 0
2 1 0
1 4 0
-1
70
1
0
10
0
10
N-CHANNEL
0
-1
Fig 5. Capacitance vs. Drain-Source Voltage
0
Top :
Bottom : 4.5 V
Fig 3. On-Resistance vs. Drain Current
C
C
C
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1 0 V
V
1 5 V
rss
iss
oss
GS
Fig 1. Output Characteristics
V
5
V
DS
DS
, Drain-Source Voltage [V]
I
, Drain-Source Voltage [V]
D
, Drain Current [A]
10
0
1 0
@ Notes :
C
C
C
iss
oss
rss
1. 250 s Pulse Test
2. T
= C
= C
= C
V
GS
C
gs
ds
gd
10
= 25
= 10 V
+ C
+ C
1
gd
gd
o
C
15
( C
V
GS
@ N o t e : T
ds
= 20 V
= s h o r t e d )
@ N o t e s :
1 . V
2 . f = 1 M H z
10
1
GS
J
= 2 5
= 0 V
20
o
C
10
1 0
10
10
1 0
1 0
-1
-1
1 0
1
0
1
0
5
0
0 . 4
2
0
Fig 4. Source-Drain Diode Forward Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
1 7 5
25
o
o
C
0 . 6
C
175
Fig 2. Transfer Characteristics
2 5
2
o
C
o
V
V
C
0 . 8
SD
Q
GS
4
G
, Source-Drain Voltage [V]
- 55
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
IRFW/I510A
DS
V
o
1 . 0
DS
C
V
= 8 0 V
DS
= 5 0 V
4
= 2 0 V
1 . 2
6
@ Notes :
1. V
2. V
3. 250 s Pulse Test
6
@ N o t e s :
1 . 4
1 . V
2 . 2 5 0 s P u l s e T e s t
GS
DS
@ N o t e s : I
= 0 V
= 40 V
GS
= 0 V
1 . 6
8
8
D
1 . 8
= 5 . 6 A
2 . 0
10
1 0