IRFS4310 IRF, IRFS4310 Datasheet - Page 3

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IRFS4310

Manufacturer Part Number
IRFS4310
Description
Power MOSFET
Manufacturer
IRF
Datasheet

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
12000
10000
8000
6000
4000
2000
1000
1000
100
100
10
10
0
1
1
0.1
3.0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1
Ciss
5.0
Coss
Crss
V DS = 50V
≤ 60µs PULSE WIDTH
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
6.0
10
7.0
100
8.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
I D = 75A
TOP
BOTTOM
I D = 75A
V GS = 10V
40
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
80
V DS = 80V
VDS= 50V
VDS= 20V
20 40 60 80 100 120 140 160 180
1
4.5V
120
≤ 60µs PULSE WIDTH
Tj = 175°C
160
10
200
240
280
100
3

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