SI6463DQ Fairchild Semiconductor, SI6463DQ Datasheet - Page 4

• Manufacturer Part Number: SI6463DQ
• Description: P-Channel 2.5V Specified PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.01
I
D
0.001
0.01
= -8.8A
SINGLE PULSE
R
0.1
R
0.0001
V
DS(ON)
JA
1
T
GS
A
= 208
= 25
= -4.5V
10
LIMIT
o
o
C/W
C
-V
0.1
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
g
0.2
, GATE CHARGE (nC)
0.1
20
0.05
0.02
0.001
DC
0.01
1
10s
Figure 11. Transient Thermal Response Curve.
SINGLE PULSE
30
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1s
V
100ms
DS
= -5V
10ms
10
0.01
100 s
40
-15V
-10V
100
50
0.1
t
1
, TIME (sec)
8000
7000
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
C
0.1
ISS
-V
Power Dissipation.
DS
3
, DRAIN TO SOURCE VOLTAGE (V)
C
OSS
1
t
10
1
, TIME (sec)
C
6
RSS
10
P(pk)
Duty Cycle, D = t
T
R
SINGLE PULSE
R
R
J
JA
- T
JA
100
T
JA
A
(t) = r(t) + R
= 208°C/W
9
A
= 25°C
= 208 °C/W
t
1
100
= P * R
t
2
Si6463DQ Rev. A(W)
f = 1 MHz
V
GS
= 0 V
JA
1
(t)
JA
/ t
1000
2
12
1000