BSO307N Infineon Technologies AG, BSO307N Datasheet - Page 2

• Manufacturer Part Number: BSO307N
• Description: SIPMOS Small-Signal-Transistor
• Manufacturer: Infineon Technologies AG

Data Sheet
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
Thermal resistance @ 10 sec., min. footprint
Thermal resistance @ 10 sec.,
6 cm
D
connection. PCB is vertical without blown air.
GS
DS
DS
GS
GS
GS
= 20 µA
= 30 V, V
= 30 V, V
= 0 V, I
= 20 V, V
= 4.5 V, I
= 10 V, I
2
cooling area
D
D
= 0.25 mA, T
D
GS
GS
DS
= 5 A
= 4.1 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 ˚C
= 150 ˚C
j
= 25 ˚C
= V
DS
2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJS
th(JA)
th(JA)
min.
min.
1.2
30
-
-
-
-
-
-
-
-
Values
Values
0.035
0.05
typ.
typ.
0.1
1.6
10
10
-
-
-
-
0.075
max.
max.
0.05
62.5
100
100
BSO 307N
100
35
1
2
-
Unit
V
µA
nA
Ω
Unit
K/W
05.99