BTS6510 Infineon Technologies AG, BTS6510 Datasheet - Page 8

• Manufacturer Part Number: BTS6510
• Description: Smart Highside High Current Power Switch
• Manufacturer: Infineon Technologies AG

Overvoltage protection of logic part
R
nominal. Note that when overvoltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
R
Reverse battery protection
R
battery protection in applications with V
16 V
|V
used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through R
Infineon Technologies AG
bb
V
V
bb
, V
0.1A
R
| - 12V
19)
= 120
IN
R
1 k
Z,VIS
IN
; recommended value:
IN
are not used.
Signal GND
R
IN
if D
typ , V
IS
R
V
Z,IN
IS
D
= 1 k
S
IS
Logic
is not used (or
V
Z,IN
R
Z,IS
D
Signal GND
IS
S
nominal. Add R
Logic
= V
R
IS
V
Z,IS
R
V
R
= 66 V typ., R
R
1
R
IN
bb
1
IN
V
+
Z,VIS
R
=
PROFET
R
bb
IN
1
|V
IS
IS
Power
Transistor
bb
for reverse
Power GND
bb
+
0.1A
and R
above
| - 12V
R
1
IS
R
V
L
= 1 k
=
OUT
V
-
Page 8 of 15
+ V
V bb
.
V
if D
OUT
bb
S
is
V
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (V
V
currents at IN and IS have to be limited to 250 mA.
Version a:
Version b:
Note that there is no reverse battery protection when
using a diode without additional Z-diode V
Version c: Sometimes a neccessary voltage clamp is
given by non inductive loads R
switch and eliminates the need of clamping circuit:
Zb
bb
V
V
bb
< 30 V if R
bb
disconnect with energized inductive
V
V
bb
Zb
IN
=0). For higher clamp voltages
IN
IN
IN
PROFET
Data Sheet BTS6510
V
IS
bb
PROFET
PROFET
V
IS
bb
L
V
IS
bb
connected to the same
OUT
OUT
OUT
V
ZL
ZL
ZL
2003-Oct-01
< 72 V or
, V
Zb
R
L
.