FQB10N60C Fairchild Semiconductor, FQB10N60C Datasheet - Page 3

• Manufacturer Part Number: FQB10N60C
• Description: 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
2.0
1.5
1.0
0.5
0.0
10
500
10
10
-1
0
Figure 5. Capacitance Characteristics
1
0
0
10
Figure 3. On-Resistance Variation vs
-1
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
15.0 V
5
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
10
10
V
V
0
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
15
V
GS
C
C
C
oss
rss
= 10V
iss
20
V
GS
= 20V
C
C
C
iss
oss
rss
25
10
= C
= C
= C
1
※ Notes :
10
gs
gd
ds
1. 250 μ s Pulse Test
2. T
+ C
※ Note : T
+ C
1
C
gd
gd
※ Notes ;
= 25 ℃
(C
1. V
2. f = 1 MHz
30
ds
= shorted)
GS
J
= 25 ℃
= 0 V
35
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
o
C
150
Variation with Source Current
0.4
o
C
10
150℃
4
V
V
and Temperature
Q
GS
SD
0.6
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
25℃
DS
20
V
= 480V
-55
DS
V
= 300V
o
C
DS
0.8
6
= 120V
30
1.0
※ Notes :
1. V
2. 250 μ s Pulse Test
※ Notes :
DS
※ Note : I
1. V
2. 250μ s Pulse Test
8
= 40V
GS
40
= 0V
1.2
D
= 9.5A
Rev. A, October 2003
1.4
10
50