IPD088N06N3G Infineon Technologies, IPD088N06N3G Datasheet - Page 5

• Manufacturer Part Number: IPD088N06N3G
• Description: Power-Transistor
• Manufacturer: Infineon Technologies

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Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
200
180
160
140
120
100
120
100
80
60
40
20
80
60
40
20
DS
0
GS
0
0
0
); T
); |V
j
=25 °C
GS
DS
j
|>2|I
1
10 V
2
D
|R
8 V
DS(on)max
2
V
V
DS
GS
175 °C
4
[V]
[V]
3
6.5 V
7 V
5.5 V
4.5 V
6 V
25 °C
5 V
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
100
20
18
16
14
12
10
80
60
40
20
D
=f(I
8
6
4
2
0
0
); T
0
0
D
5 V
j
); T
=25 °C
GS
5.5 V
j
=25 °C
40
50
6 V
80
I
I
D
D
[A]
6.5 V
[A]
120
IPD088N06N3 G
100
7 V
160
8 V
10 V
2008-11-26
200
150
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