FQD1N60 Fairchild Semiconductor, FQD1N60 Datasheet - Page 3

• Manufacturer Part Number: FQD1N60
• Description: 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
200
150
100
10
10
10
50
30
25
20
15
10
-1
-2
0
0
10
10
5
0
0.0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
0.5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
, Drain Current [A]
0
0
1.0
C
C
C
iss
oss
rss
V
GS
= 20V
V
1.5
GS
= 10V
C
C
C
iss
oss
rss

Notes :
= C
= C
= C
1. 250  s Pulse Test
2. T
10
10

Note : T
gs
gd
ds
1
1
C
+ C
+ C
= 25 
2.0

Notes :
gd
gd
1. V
2. f = 1 MHz
(C
ds
GS
J
= shorted)
= 25 
= 0 V
2.5
10
10
10
10
-1
12
10
-1
0
0
0.2
8
6
4
2
0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
1
150

4
0.6
V
V
Q
GS
SD
and Temperature
V
G
V
DS
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
V
, Total Gate Charge [nC]
DS
25

150

DS
= 480V
25

= 300V
= 120V
2
0.8
6
1.0
3
-55


Notes :

Notes :
1.2
1. V
2. 250  s Pulse Test
1. V
2. 250  s Pulse Test

Note : I
8
DS
GS
= 50V
= 0V
4
D
1.4
= 1.2 A
Rev. A, April 2000
1.6
10
5