FQD8N25 Fairchild Semiconductor, FQD8N25 Datasheet - Page 4

• Manufacturer Part Number: FQD8N25
• Description: 250V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
※ Notes :
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
1 0
C
J
0
= 150
= 25
- 5
o
DS(on)
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
C
o
DC
C
0 .2
50
0 .1
10 ms
Figure 11. Transient Thermal Response Curve
1 ms
100
1 0
(Continued)
o
- 4
C]
s i n g l e p u ls e
10
※ Notes :
100 s
t
1. V
2. I
2
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= 250 μ A
150
= 0 V
10 s
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7
6
5
4
3
2
1
0
-100
25
Figure 8. On-Resistance Variation
※ N o te s :
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
DM
θ J C
J M
50
- T
( t) = 2 .5 ℃ /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
/t
θ J C
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 4.0 A
= 10 V
200
150
Rev. A, May 2000