IPA030N10N3G Infineon Technologies, IPA030N10N3G Datasheet - Page 7

• Manufacturer Part Number: IPA030N10N3G
• Description: Power-Transistor
• Manufacturer: Infineon Technologies

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Rev. 2.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
110
105
100
1
95
90
AV
1
-60
=f(T
); R
j
GS
); I
j(start)
=25 Ω
-20
D
=1 mA
10
20
t
T
AV
150 °C
j
60
[µs]
[°C]
100 °C
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=79 A pulsed
g s
40
Q
Q
20 V
gate
g
Q
80
sw
[nC]
Q
50 V
g d
IPA030N10N3 G
120
80 V
Q
g ate
2009-07-09
160