MT28F320J3 Micron, MT28F320J3 Datasheet - Page 12

• Manufacturer Part Number: MT28F320J3
• Description: Q-FLASHTM MEMORY
• Manufacturer: Micron

NOTE: 1. Commands other than those shown in Table 4 are reserved for future device implementations and should not be used.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
10. The number of bytes/words to be written to the write buffer = n + 1, where n = byte/word count argument. Count
11. The WRITE-to-BUFFER or ERASE operation does not begin until a CONFIRM command (D0h) is issued.
12. Attempts to issue a block erase or program to a locked block while RP# = V
13. Either 40h or 10h is recognized by the ISM as the byte/word program setup.
14. Program suspend can be issued after either the WRITE-to-BUFFER or WORD/BYTE PROGRAM operation is initiated.
15. The CLEAR BLOCK LOCK BITS operation simultaneously clears all block lock bits.
2. The SCS is also referred to as the extended command set.
3. Bus operations are defined in Table 3.
4.
5.
6. The upper byte of the data bus (DQ8–DQ15) during command WRITEs is a “Don’t Care” in x16 operation.
7. Following the READ IDENTIFIER CODES command, READ operations access manufacturer, device, and block lock codes.
8. If the ISM is running, only DQ7 is valid; DQ15–DQ8 and DQ6–DQ0 float, which places them in High-Z.
9. After the WRITE-to-BUFFER command is issued, check the XSR to make sure a buffer is available for writing.
See Block Status Register section for read identifier code data.
ranges on this device for byte mode are n = 00h to n = 1Fh and for word mode, n = 0000h to n = 000Fh. The third and
consecutive bus cycles, as determined by n, are for writing data into the write buffer. The CONFIRM command (D0h) is
expected after exactly n + 1 WRITE cycles; any other command at that point in the sequence aborts the WRITE-to-
BUFFER operation. Please see Figure 4, WRITE-to-BUFFER Flowchart, for additional information.
SRD = Data read from status register; see Table 16 for a description of the status register bits
QA = Query data base address
QD = Data read from query data base
BA = Address within the block
PA = Address of memory location to be programmed
PD = Data to be programmed at location PA; data is latched on the rising edge of WE#
CC = Configuration code
IA = Identifier code address; see Figure 2 and Table 15
ID = Data read from identifier codes
X = Any valid address within the device
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
IH
will fail.
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
©2002, Micron Technology, Inc.