MT28F320J3 Micron, MT28F320J3 Datasheet - Page 40

no-image

MT28F320J3

Manufacturer Part Number
MT28F320J3
Description
Q-FLASHTM MEMORY
Manufacturer
Micron
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT28F320J3
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT28F320J3BS-11
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT28F320J3BS-11 ET
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT28F320J3BS-11 ET TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT28F320J3BS-11 GMET
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT28F320J3BS-11 GMET TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT28F320J3BS-11 MET
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT28F320J3BS-11ET
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT28F320J3RG-11
Manufacturer:
MICRON
Quantity:
1 831
Part Number:
MT28F320J3RG-11ET
Manufacturer:
PERICOM
Quantity:
102
Part Number:
MT28F320J3RG-11ET:A
Manufacturer:
MT
Quantity:
974
Part Number:
MT28F320J3RP-11A
Manufacturer:
MICRON
Quantity:
1 831
CAPACITANCE
(T
RECOMMENDED DC ELECTRICAL CHARACTERISTICS
Commercial Temperature (0ºC ≤ T
NOTE: 1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds).
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
DESCRIPTION
V
Current
V
Current
V
Read Current
V
Read Current
A
CC
CC
CC
CC
= +25ºC; f = 1 MHz)
Page Mode
Power-Down
Standby
Asynchronous Mode
2. Includes STS.
3. CMOS inputs are either V
4. Sampled, not 100% tested.
5. I
6. Block erase, programming, and lock bit configurations are inhibited when V
7. Typically, V
8. Block erase, programming, and lock bit configurations are inhibited when V
the device’s current draw is I
the range between V
the range between V
CCWS
and I
CCES
PEN
are specified with the device deselected. If the device is read or written while in erase suspend mode,
is connected to V
LKO
PENLK
BYTE#
All other Pins
V
V
standard word/byte single READs;
CC
CC
CMOS Inputs; V
CMOS inputs; V
CMOS inputs; V
CMOS inputs; V
(MIN) and V
TTL inputs; V
Device is enabled; RP# = V
Q = V
Q = V
CC
4-word page mode READs;
4-word page mode READs;
(MAX) and V
V
±0.2V or V
f = 33 MHz; I
A
CC
CCR
f = 5 MHz; I
f = 5 MHz; I
≤ +85ºC), Extended Temperature (-40ºC ≤ T
Q = V
Device is enabled;
Device is enabled;
Device is enabled;
Device is enabled;
RP# = GND ±0.2V;
RP# = V
CC
CC
CC
I
or I
OUT
CONDITIONS
.
Q (MAX) using standard
Q (MAX) using standard
CCW
CC
(STS) = 0mA
CC
(MIN), or above V
SS
PENH
.
(continued on next page)
Q (MAX) using
CC
CC
±0.2V. TTL inputs are either V
CC
CC
CC
CC
Q ±0.2V
OUT
OUT
= V
OUT
(MIN), or above V
= V
= V
= V
= V
= 0mA
= 0mA
CC
= 0mA
CC
CC
CC
CC
(MAX);
(MAX);
(MAX);
(MAX);
(MAX);
40
CC
IH
(MAX).
PENH
SYMBOL
(MAX).
I
I
I
I
CC
CC
CC
CC
1
2
3
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IL
or V
SYMBOL
CC
PEN
IH
< V
C
C
TYP
0.71
12.5
.
128Mb, 64Mb, 32Mb
50
50
11
15
≤ V
OUT
OUT
C
LKO
A
PENLK
≤ +85ºC)
Q-FLASH MEMORY
, and they are not guaranteed in
, and they are not guaranteed in
TYP
MAX
10
120
120
5
5
20
29
50
2
MAX
UNITS NOTES
12
12
mA
mA
mA
mA
µA
µA
8
©2002, Micron Technology, Inc.
UNITS
1, 2, 3
1, 3
1, 3
p F
p F
p F

Related parts for MT28F320J3