MT28F320J3 Micron, MT28F320J3 Datasheet - Page 46

• Manufacturer Part Number: MT28F320J3
• Description: Q-FLASHTM MEMORY
• Manufacturer: Micron

BLOCK ERASE, PROGRAM, AND LOCK BIT CONFIGURATION PERFORMANCE
(Notes: 1, 2, 3); Commercial Temperature (0ºC ≤ T
NOTE: 1. Typical values measured at T
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
CHARACTERISTICS
PARAMETER
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
Byte/Word Program Time (Using WORD/BYTE PROGRAM Command)
Block Program Time (Using WRITE-to-BUFFER Command)
Block Erase Time
Set Lock Bits Time
Clear Block Lock Bits Time
Program Suspend Latency Time to Read
Erase Suspend Latency Time to Read
2. These performance numbers are valid for all speed versions.
3. Sampled, but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time is 4.7µs/byte (typical).
7. Effective per-word program time is 9.4µs/word (typical).
8. MAX values are measured at worst-case temperature and V
change based on device characterization.
A
= +25ºC and nominal voltages. Assumes corresponding lock bits are not set. Subject to
A
≤ +85ºC), Extended Temperature (-40ºC ≤ T
46
CC
corner after 100,000 cycles.
SYMBOL
t
t
t
t
t
t
WED1
WED2
WED3
WED4
WED5
WED6
t
t
LPS
LES
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb, 64Mb, 32Mb
0.75
TYP
150
0.6
0.5
14
64
25
26
-11/-12/-15
Q-FLASH MEMORY
MAX
654
630
1.7
0.7
75
30
35
5
8
A
UNITS
sec
sec
sec
≤ +85ºC)
µs
µs
µs
µs
µs
©2002, Micron Technology, Inc.
4, 5, 6, 7
NOTES
4
4
4
4
5