MT28F320J3 Micron, MT28F320J3 Datasheet - Page 17

• Manufacturer Part Number: MT28F320J3
• Description: Q-FLASHTM MEMORY
• Manufacturer: Micron

DEVICE GEOMETRY DEFINITION
the device geometry.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
OFFSET LENGTH
Tables 11a and 11b provide important details about
2Ah
2Dh
2Ch
27h
28h
1
2
2
1
4
DESCRIPTION
“n” such that device size = 2
Flash device interface: x8 async, x16 async, x8/x16 async;
28:00 29:00, 28:01 29:00, 28:02 29:00
“n” such that maximum number of bytes in write
buffer = 2
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions
3. Symmetrically blocked partitions have one blocking
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
Bits 0–15 = y; y + 1 = number of identical-size erase blocks
Bits 16–31 = z; region erase block(s) size are z x 256 bytes
with one or more contiguous same-size erase blocks
region
ADDRESS
Device Geometry Definition Codes
n
2Ah
2Dh
27h
28h
29h
2Bh
2Ch
2Eh
2Fh
30h
Device Geometry Definitions
32Mb
Table 11b
Table 11a
16
02
00
05
00
01
1F
00
00
02
n
in number of bytes
17
64Mb
17
02
00
05
00
01
3F
00
00
02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb
18
02
00
05
00
01
7F
00
00
02
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
2Ah
2Dh
27h
28h
29h
2Bh
2Ch
2Eh
2Fh
30h
(see table below)
CODE
02
00
05
00
01
©2002, Micron Technology, Inc.
x8/x16
32
1