PTF080601F Infineon Technologies AG, PTF080601F Datasheet

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PTF080601F

Manufacturer Part Number
PTF080601F
Description
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Manufacturer
Infineon Technologies AG
Datasheet
1.PTF080601F.pdf (6 pages)
LDMOS RF Power Field Effect Transistor
60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
RF Characteristics
Two-Tone Measurements
V
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
EDGE Measurements
V
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
Developmental Data Sheet
DD
DD
= 28 V, I
= 28 V, I
-20
-30
-40
-50
-60
-70
-80
-90
Typical EDGE Modulation Spectrum Performance
32
600KHz
DQ
DQ
400KHz
= 550 mA, P
= 550 mA, P
Mod Spectrum vs. Output Power
34
V
DD
= 28 V, I
36
(not subject to production test—verified by design/characterization in Infineon test fixture)
at T
Output Power (dBm)
OUT
OUT
DQ
(tested in Infineon test fixture)
CASE
= 550 mA, f = 959.8 MHz
38
= 30 W, f = 959.8 MHz
= 60 W PEP, f
= 25°C unless otherwise indicated
40
C
42
= 960 MHz, tone spacing = 1000 kHz
Efficiency
44
46
1
50
45
40
35
30
25
20
15
10
5
EVM (RMS)
Symbol
Symbol
ACPR
ACPR
G
G
IMD
D
D
ps
ps
PTF080601A
Package 20248
PTF080601E
Package 30248
Features
•
•
•
•
•
•
•
Developmental PTF080601
Broadband internal matching
Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 90 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
Min
Min
PTF080601F
Package 31248
—
—
—
—
—
—
—
—
Typ
Typ
–32
–61
–74
2.0
18
42
18
40
Max
Max
—
—
—
—
—
—
—
—
2003-12-05
Units
Units
dBc
dBc
dBc
dB
dB
%
%
%

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PTF080601F Summary of contents

Page 1

... Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ (CW) output power PTF080601A Package 20248 PTF080601E Package 30248 PTF080601F Package 31248 Min Typ Max G — 18 — ps — 42 — D IMD — ...

Page 2

DC Characteristics at T CASE Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Total Device Dissipation Above ...

Page 3

... Package Outline Specifications Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Developmental Data Sheet Developmental PTF080601 Package Description Standard ceramic, flange Thermally enhanced, flange Thermally enhanced, no flange Package 20248 3 Marking PTF080601A PTF080601E PTF080601F 2003-12-05 ...

Page 4

Package Outline Specifications 9.78 +0.10 [.385] LID 9.40 -0.15 +.004 [.370 ] -.006 19.43 ±0.51 [.765±.020] 0.025 [.001] -A- 0.51 [.020] Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions ...

Page 5

Package Outline Specifications Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins drain source gate 4. Lead thickness: 0.10± 0.051/0.025 ...

Page 6

... International Edition 2003-12-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. ...

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