BFP540F Infineon Technologies AG, BFP540F Datasheet - Page 2

• Manufacturer Part Number: BFP540F
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies AG

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 0.5 V, I
= 14 V, V
= 5 V, I
B
E
= 0
C
= 0
CE
BE
= 0
= 3.5 V
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
4.5
50
-
-
-
Values
typ.
110
5
-
-
-
max.
100
200
Jan-28-2004
10
10
-
BFP540F
Unit
V
µA
nA
µA
-