KSE2955 Fairchild Semiconductor, KSE2955 Datasheet

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KSE2955

Manufacturer Part Number
KSE2955
Description
General Purpose and Switching Applications
Manufacturer
Fairchild Semiconductor
Datasheet
©2000 Fairchild Semiconductor International
General Purpose and Switching Applications
• High Current Gain Bandwidth Product : f
PNP Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse test: PW 300 s, duty cycle 2% Pulse
I
V
V
V
I
P
T
T
BV
I
I
I
I
h
V
V
f
B
C
CEO
CEX1
CEX2
EBO
T
DC Current Gain Specified to I
FE
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
Symbol
CEO
(sat)
(on)
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Collector- Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
= 10 A
a
C
T
=25 C)
=25 C)
T
C
=25 C unless otherwise noted
= 2MHz (Min.)
Parameter
T
C
=25 C unless otherwise noted
KSE2955T
I
@ T
V
V
V
I
I
V
V
V
V
V
C
C
C
CE
CE
CE
EB
CE
CE
CE
CE
= - 200mA, I
= - 4A, I
= - 10A, I
C
= - 5V, I
= - 30V, I
= - 70V, V
= - 70V, V
= - 4V, I
= - 4V, I
= - 4V, I
= - 10V, I
= 150 C
Test Condition
B
B
C
= - 0.4A
C
C
C
= - 3.3A
B
C
= 0
= - 4A
= - 10A
B
= - 4A
BE
BE
= 0
= - 500mA
= 0
(off) = 1.5V
(off) = 1.5V
1.Base
1
- 55 ~ 150
2.Collector
Value
- 70
- 60
- 10
150
0.6
75
- 5
- 6
Min.
-60
20
TO-220
5
2
Max.
-700
100
-1.8
3.Emitter
-1.1
-1
-5
-5
-8
Rev. A1, December 2000
Units
W
W
V
V
V
A
A
Units
MHz
C
C
mA
mA
mA
V
V
V
V
A

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KSE2955 Summary of contents

Page 1

... DC Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter On Voltage BE f Current Gain Bandwidth Product T * Pulse test: PW 300 s, duty cycle 2% Pulse ©2000 Fairchild Semiconductor International KSE2955T = 2MHz (Min =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C ...

Page 2

... Typical Characteristic 1000 100 10 1 -0.01 -0.1 I [A], COLLECTOR CURRENT C Figure 1. DC current Gain -100 -10 -1 -0.1 -1 -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Safe Operating Area ©2000 Fairchild Semiconductor International - - -0.1 -0.01 -0.1 -1 -10 Figure 2. Base-Emitter Saturation Voltage 105 -100 I = 10I ...

Page 3

... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, December 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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