ESD5V0S Infineon Technologies, ESD5V0S Datasheet - Page 2

• Manufacturer Part Number: ESD5V0S
• Description: Silicon TVS Diodes
• Manufacturer: Infineon Technologies

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Maximum Ratings at T
Parameter
ESD contact discharge
Peak pulse current (t
Peak pulse power (t
Operating temperature range
Storage temperature
Electrical Characteristics at T
Parameter
Characteristics
Reverse working voltage
Breakdown voltage
I
Reverse current
V
V
Clamping voltage (positive transient)
I
I
I
Forward clamping voltage (negative transients)
I
I
I
Diode capacitance
V
1
2
(BR)
PP
PP
PP
PP
PP
PP
V
I
pp
R
R
R
ESD
= 3.3 V
= 5 V
= 0 V, f = 1 MHz
= 5 A, t
= 24 A, t
= 40 A, t
= 5 A, t
= 24 A, t
= 40 A, t
according to IEC61000-4-5
= 1 mA
according to IEC61000-4-2
p
p
p
p
p
p
= 8/20 µs
= 8/20 µs
= 8/20 µs
= 8/20 µs
= 8/20 µs
= 8/20 µs
p
p
= 8 / 20 µs)
2)
2)
= 8 / 20 µs)
1)
2)
2)
2)
2)
A
= 25°C, unless otherwise specified
A
2)
= 25°C, unless otherwise specified
2)
2
Symbol
V
I
P
T
T
Symbol
V
V
I
V
V
C
pp
R
ESD
pk
op
stg
RWM
(BR)
CL
FC
T
min.
5.5
-
-
-
-
-
-
-
-
-
-
-55...125
-65...150
Values
Value
600
typ.
430
6.7
7.5
1.5
11
30
40
9
3
4
-
-
-
ESD5V0S...
max.
500
9.5
12
14
20
5
8
3
5
6
2007-12-07
5
Unit
kV
A
W
°C
Unit
V
µA
V
pF
Datasheet pdf - http://www.DataSheet4U.net/