MBM29BS12DH Fujitsu Media Devices, MBM29BS12DH Datasheet - Page 47

• Manufacturer Part Number: MBM29BS12DH
• Description: (MBM29FS12DH / MBM29BS12DH) BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
• Manufacturer: Fujitsu Media Devices

*1: The l
*2: l
*3: Automatic sleep mode enables the low power mode when address remain stable for t
*4: Embedded Algorithm (Program or Erase) is in progress. (@5 MHz)
*5: Applicable for only V
Input Leakage Current
Output Leakage Current
V
Current
V
Read Current*
V
V
V
(Standby, Reset)*
V
V
(Read-While-Program )*
V
(Read-While-Erase)*
Input Low Level
Input High Level
Output Low Voltage Level
Output High Voltage Level
Voltage for ACC Program
Acceleration*
(Automatic Sleep Mode)
CC
CC
CC
CC
CC
CC
CC
CC
DC CHARACTERISTICS
• CMOS Compatible
CC
Active Burst Read
Active Asynchronous
Active Current*
Current (Standby)
Current
Current
Active Current
Active Current
active while Embedded Algorithm (Program or Erase) is in progress.
CC
Parameter
current listed includes both the DC operating current and the frequency dependent component.
5
1
3
2
4
CC
4
.
Symbol
V
I
I
I
I
I
I
I
I
V
V
V
I
V
CCB
CC1
CC2
CC3
CC4
CC5
CC6
CC7
I
ACC
LO
LI
OH
OL
IH
IL
V
V
CE = V
66 MHz
CE = V
WE = V
CE = V
CE = RESET = V
RESET = V
V
RESET = V
CE = V
CE = V
V
V
I
V
I
V
OL
OH
0.2 V or V
IN
OUT
CC
CCQ
CCQ
CC
CC
= 100 µA,
= –100 µA,
= V
= V
= V
= V
= V
= 1.8 V
= 1.8 V
SS
IL
IL
IL
CC
IL
IL
CC
CC
IH
, OE = V
SS
, OE = V
, OE = V
, OE = V
, OE = V
to V
Max, CE = V
Min = V
Min = V
Conditions
to V
SSQ
CCQ
SSQ
cc
cc
, V
—
IH
0.2 V, V
, V
0.2 V
IH
IH
IH
IH
0.2 V, CLK = V
CC
CCQ
CCQ
CC
,
, WE = V
, V
CC
10 MHz
5 MHz
= V
PP
SSQ
0.2 V
= V
MBM29BS/FS12DH
= V
cc
IN
cc
= V
Max
IH
0.2 V,
IH
Max
,
CCQ
IL
V
V
CCQ
CCQ
–0.5
11.5
Min
—
—
—
—
—
—
—
—
—
—
—
–0.4
–0.1
ACC
Value
Typ
0.2
0.2
0.2
—
—
15
20
10
15
25
25
—
—
—
—
—
+ 60 ns.
V
CCQ
Max
12.5
0.4
0.1
30
30
15
40
50
50
50
60
60
—
1.0
1.0
+0.4
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
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