MBM29BS12DH Fujitsu Media Devices, MBM29BS12DH Datasheet - Page 51

• Manufacturer Part Number: MBM29BS12DH
• Description: (MBM29FS12DH / MBM29BS12DH) BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
• Manufacturer: Fujitsu Media Devices

Note : Test conditions T
Note : Test conditions T
Sector Erase Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Input Capacitance
Output Capacitance
Control Pin Capacitance
ERASE AND PROGRAMMING PERFORMANCE
FBGA PIN CAPACITANCE
Typical Erase conditions T
Typical Program conditions T
Parameter
Parameter
A
A
= 25°C, f = 1.0 MHz
= 25°C,
C
C
C
100,000
A
IN
OUT
IN2
= 25°C, V
Min
Symbol
A
—
—
—
= 25°C, V
CC
Limit
= 1.8 V,
CC
V
V
V
IN
OUT
IN
= 1.8 V, Data = checker
25.2
Typ
0.5
6.0
= 0
= 0
—
= 0
Test Setup
Max
100
95
—
2
MBM29BS/FS12DH
cycle
Unit
µs
s
s
TBD
TBD
TBD
Typ
Excludes programming
prior to erasure
Excludes system level
overhead
Excludes system level
overhead
Max
TBD
TBD
TBD
Comments
Unit
pF
pF
pF
15
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