MBM29BS12DH Fujitsu Media Devices, MBM29BS12DH Datasheet - Page 50

• Manufacturer Part Number: MBM29BS12DH
• Description: (MBM29FS12DH / MBM29BS12DH) BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
• Manufacturer: Fujitsu Media Devices

50
MBM29BS/FS12DH
*: Does not include the preprogramming time.
Note : See the "Erase and Programming Performance" section for more information.1.
Write Cycle Time
Address Setup Time
Address Hold Time
AVD Low Time
CE Low to AVD High
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
CE Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation
Sector Erase Operation*
V
V
V
CE Setup Time to WE
AVD Set Up Time to CLK
AVD Hold Time to CLK
AVD Setup Time to WE
AVD Hold Time to WE
Address Setup Time to CLK
Address Hold Time to CLK
Address Setup Time to AVD
Address Hold Time to AVD
WE Low to CLK
AVD High to WE Low
CLK to WE Low
Erase Time-out TIme
(During Accelerated Programming)
ACC
ACC
CC
• Write (Erase/Program) Operations
Setup Time
Rise and Fall Time
Setup Time
Parameter
15
JEDEC
t
t
t
t
t
t
t
t
t
t
WHWH1
WHWH2
t
t
WHWL
DVWH
WHDX
GHWL
WHEH
EHWH
AVAV
AVWL
WLAX
ELWL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Symbols
Standard
t
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
t
t
t
GHWL
t
AVSW
AVHW
t
t
t
AHWL
AVDP
CLAH
SR/W
AVSC
AVHC
t
t
t
t
t
t
t
t
WPH
VIDS
t
WLC
CWL
TOW
VCS
ACS
ACH
AAS
AAH
WC
WP
VID
AS
AH
DS
DH
CH
CS
Min Typ Max
500
55
20
12
12
45
30
20
—
—
50
50
0
0
0
0
0
1
0
5
7
5
7
5
7
5
7
0
5
5
54 MHz
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Value
Min Typ Max
500
50
20
10
10
20
20
20
50
50
—
—
0
0
0
0
0
1
0
4
6
4
6
4
6
4
6
0
5
5
66 MHz
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
s