fqd9n08 Fairchild Semiconductor, fqd9n08 Datasheet - Page 3

• Manufacturer Part Number: fqd9n08
• Description: 80v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
500
400
300
200
100
1.0
0.8
0.6
0.4
0.2
0.0
10
10
0
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
4
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
8
I
D
10
, Drain Current [A]
0
10
0
12
V
C
C
C
V
GS
oss
iss
GS
rss
= 20V
= 10V
16
C
C
C
iss
oss
rss
 Notes :
= C
= C
= C
10
1. 250 s Pulse Test
2. T
 Note : T
gs
gd
ds
1
C
+ C
+ C
= 25
10
gd
gd
 Notes :
1
20
(C
1. V
2. f = 1 MHz
ds
J
= shorted)
= 25
GS
= 0 V
24
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
150
0.4
150
1
Variation vs. Source Current
4
V
V
0.6
2
GS
SD
Q
and Temperature
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
-55
25
V
DS
V
= 64V
0.8
DS
3
= 40V
6
1.0
4
 Notes :
 Notes :
1.2
5
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
 Note : I
8
DS
GS
= 30V
= 0V
1.4
D
6
= 9.3A
Rev. A2, December 2000
1.6
10
7