fqb140n03l Fairchild Semiconductor, fqb140n03l Datasheet

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fqb140n03l

Manufacturer Part Number
fqb140n03l
Description
30v Logic N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
FQB140N03L / FQI140N03L
30V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters,
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
high
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
efficiency
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
switching
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
for
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
power
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 140A, 30V, R
• Low gate charge ( typical 73 nC)
• Low Crss ( typical 580 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
FQI Series
I
2
-PAK
FQB140N03L / FQI140N03L
DS(on)
Typ
--
--
--
-55 to +175
= 0.0045
18.0
3.75
140
490
710
140
180
300
7.0
1.2
30
99
20
G


@V
Max
0.84
62.5
40
Q F E T
GS
 
 
= 10 V




S
D






May 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. A1. May 2001
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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fqb140n03l Summary of contents

Page 1

... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° 25°C) C Parameter May 2001 0.0045 @ DS(on FQB140N03L / FQI140N03L Units 30 V 140 490 710 mJ 140 A 18.0 mJ 7.0 V/ns 3.75 W 180 W 1.2 W/°C -55 to +175 °C 300 °C Typ Max Units -- 0.84 °C/W ...

Page 2

... DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature 6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 A GS ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 12000 10000 C 8000 oss C iss 6000 4000 C rss 2000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 175  10V 175   Note : ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0  Notes : 0 250  0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2001 Fairchild Semiconductor Corporation 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Rev. A1. May 2001 ...

Page 8

... Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2001 Fairchild Semiconductor Corporation 2 I PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A1. May 2001 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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