fqu2n60 Fairchild Semiconductor, fqu2n60 Datasheet - Page 4
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fqu2n60
Manufacturer Part Number
fqu2n60
Description
Fqd2n60 / Fqu2n60 600v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQU2N60.pdf
(9 pages)
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©2000 Fairchild Semiconductor International
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
-2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1 0
1 0
Notes :
- 1
1. T
2. T
3. Single Pulse
1 0
0
C
J
- 5
= 25
= 150
0 .0 1
0 .0 2
0 .0 5
D = 0 .5
50
0 .2
DS(on)
0 .1
o
C
o
C
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
C]
- 4
s i n g l e p u ls e
1 ms
Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= 250 A
100 s
150
= 0 V
10 s
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
2.0
1.5
1.0
0.5
0.0
25
N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
J C
J M
DM
- T
50
( t) = 2 .7 8 /W M a x .
vs. Case Temperature
C
= P
T
J
vs. Temperature
T
t
, Junction Temperature [
1
0
C
D M
t
1 0
, Case Temperature [ ]
2
* Z
0
75
1
J C
/t
2
( t)
50
100
1 0
1
100
o
C]
Notes :
125
1. V
2. I
150
D
GS
= 1.2 A
= 10 V
Rev. A, April 2000
150
200