fga180n33at Fairchild Semiconductor, fga180n33at Datasheet - Page 2

• Manufacturer Part Number: fga180n33at
• Description: Fga180n33at 330v, 180a Pdp Trench Igbt
• Manufacturer: Fairchild Semiconductor

FGA180N33AT Rev. A
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
t
t
t
t
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
ies
oes
res
g
ge
gc
FGA180N33AT
CES
Collector to Emitter Breakdown Voltage V
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
FGA180N33ATTU
Parameter
Device
Package
TO-3P
V
V
I
I
I
I
T
V
f = 1MHz
V
R
Resistive Load, T
V
R
Resistive Load, T
V
V
C
C
C
C
C
GE
CE
GE
CE
CC
CC
CE
GE
G
G
= 40A
= 180A
= 180A
= 250uA, V
= 125
= 5Ω, V
= 5Ω, V
= 30V
= V
= 200V, I
= 0V, I
= V
= 200V, I
= 200V, I
= 15V
Test Conditions
T
C
CES
GES
,
o
= 25°C unless otherwise noted
V
,
,
C
,
V
V
GE
2
C
V
GE
GE
, V
, V
GE
GE
GE
= 250µA
C
C
C
CE
= 15V
= 15V,
= 15V,
GE
CE
= 15V,
= 15V
= 40A,
= 40A,
= 40A,
= 0V,
Packaging
= V
C
C
= 0V
= 0V
= 25
= 125
GE
Type
Tube
o
C
o
C
Qty per Tube
Min.
330
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30ea
Typ.
3880
1.68
1.89
305
180
108
180
250
169
112
4.0
1.1
27
80
26
75
22
69
-
-
-
Max.
±400
Max Qty per
250
240
300
5.5
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.fairchildsemi.com
Box
-
Units
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V