s29ns01gs Meet Spansion Inc., s29ns01gs Datasheet - Page 3

• Manufacturer Part Number: s29ns01gs
• Description: S29ns01gs 1024 Megabit 128 Megabyte 16-bit Data Width, Burst Access, Simultaneous Read/write, 1.8 Volt-only Flash Memory In 65 Nm Mirrorbit Technology
• Manufacturer: Meet Spansion Inc.

Distinctive Characteristics
This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-
ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document
may be revised by subsequent versions or modifications due to changes in technical specifications.
S29NS-S MirrorBit
Family
1024 Megabit (128 Megabyte)
16-bit Data Width, Burst Access, Simultaneous Read/Write,
1.8 Volt-only Flash Memory in 65 nm MirrorBit
Data Sheet (Preliminary)
S29NS01GS
Big, Fast, NOR Flash
– 128 MBytes of XIP code and data storage
– 115 ns max. random access to any location, up to 108 MHz burst
– 10 times faster program than traditional NOR Flash
– 7 times faster erase than traditional NOR
– Traditional NOR Flash interface
Single supply 1.8 V read/program/erase (1.70 V – 1.95 V)
16-bit (Word) data bus width
Asynchronous read mode
Simultaneous Read/Write (SRW) operation
– Program or Erase in one bank while reading from any other bank
– Memory array is divided into 16 equal size banks
Programmable burst read modes
– Linear 8, or 16 word (16 or 32 Byte) burst with wrap-around
– Linear continuous burst
RDY output for data transfer flow control
Sector Erase
– Uniform sectors of 128 Kbyte
– 0.7 MB/s erase rate
Page Programming up to 512-byte groups
– 2 MB/s program rate when programming full 512 Byte buffer
– Bit-field programming for bit resolution programming
Suspend and Resume commands for Program and Erase
operations
Write operation status register bits indicate program and
erase operation completion
read
Publication Number S29NS-S_00
®
Eclipse
Revision 02
™
®
Technology
Program-Erase Endurance
– 100,000 cycles per sector (typical)
Data Protection
– Secure Silicon Region of 1KBytes
– Hardware Sector Protection (via ACC pin)
– Boot code controlled sector protection
– Dynamic sector protection
– 10-year data retention (typical)
Common Flash Interface (CFI) data structure
Wireless Temperature range (-25°C to +85°C)
Offered Packages
– Universal Footprint: 186-ball FBGA (11 mm x 13 mm)
Flash
– One Time Program (OTP) area of 512 bytes each for factory
– Selected sectors protected when ACC input is at V
– A range of sectors may be protected to prevent program and
– All sectors are unprotected at power on for simplified system
– A single command is used to protect all sectors from program
– A single sector at a time may be unprotected by a command to
and customer
erase until the next hardware reset or power is removed from
the device
production test & programming
or erase
enable programming or erase.
Issue Date April 20, 2009
IL