s29ns01gs Meet Spansion Inc., s29ns01gs Datasheet - Page 66

• Manufacturer Part Number: s29ns01gs
• Description: S29ns01gs 1024 Megabit 128 Megabyte 16-bit Data Width, Burst Access, Simultaneous Read/write, 1.8 Volt-only Flash Memory In 65 Nm Mirrorbit Technology
• Manufacturer: Meet Spansion Inc.

Notes
1. Typical program and erase times are under the following conditions: 25°C, 1.8 V V
2. Maximum program and erase times are under the following conditions: 90°C, V
3. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
4. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See
5. The device has a minimum erase and program cycle endurance of 10,000 cycles.
66
Sector Erase
Write Buffer Programming
Bit-field Write Buffer Programming
Sector Programming Time
Chip Programming
Erase Suspend/Latency (t
Program Suspend/Latency (t
Erase Resume to next Erase Suspend (t
Program Resume to next Program Suspend (t
Blank Check
10.7.5
Definitions
on page 67
Erase and Programming Performance
ESL
PSL
for further information on command definitions.
)
Parameter
)
ERS
0.7
2 MBytes/s
1 MBytes/s
2 MBytes/s
2 MBytes/s
)
MBytes/s
PRS
)
S29NS-S MirrorBit
128 Kbyte
32 Kbyte
512 byte
1 byte
16 byte (CL)
256 byte
128 Kbyte
32 Kbyte
1Gbit
D a t a
S h e e t
®
Eclipse
CC
Typ
180
244
247
100
90
30
50
63
32
64
60
CC
= 1.70 V, 100,000 cycles, checkerboard pattern.
(1)
, 10,000 cycles, checkerboard pattern.
™
Flash Family
( P r e l i m i n a r y )
Max
300
150
732
150
750
180
100
192
90
35
35
5
(2)
11.1, Command
S29NS-S_00_02 April 20, 2009
Unit
ms
ms
ms
µs
µs
µs
µs
µs
S
typical periods are needed
typical periods are needed
for Program to progress to
Minimum of 60 ns but ≥
for Erase to progress to
Minimum of 60 ns but ≥
Excludes system level
programming prior to
Target Performance
Target Performance
Includes 00h
overhead
Comments
completion.
completion.
erasure
(3)
(4)