s29ns01gs Meet Spansion Inc., s29ns01gs Datasheet - Page 60

• Manufacturer Part Number: s29ns01gs
• Description: S29ns01gs 1024 Megabit 128 Megabyte 16-bit Data Width, Burst Access, Simultaneous Read/write, 1.8 Volt-only Flash Memory In 65 Nm Mirrorbit Technology
• Manufacturer: Meet Spansion Inc.

60
10.7.2
AC Characteristics–Asynchronous Read
Notes
1. Not 100% tested.
2. If OE# is disabled before CE# is disabled, the output goes to High-Z by t
3. OE# should at a minimum not go low until AVD# address hold time t
4. For faster read cycle time (t
A/DQ15 - A/DQ0
Access Time from CE# Low
Asynchronous Access Time from address valid
Read Cycle Time
AVD# Low Time
Address Setup to rising edge of AVD#
Address Hold from rising edge of AVD#
Output Enable to Output Valid
CE# Setup to AVD# falling edge
CE# Disable to Output & RDY High Z
OE# Disable to Output High Z
AVD# High to OE# Low
CE# low to RDY valid
WE# Disable to AVD# Enable
WE# Disable to OE# Enable (Note 1)
Intra Cache Line Access Time
If CE# is disabled before OE# is disabled, the output goes to High-Z by t
If CE# and OE# are disabled at the same time, the output goes to High-Z by t
with address driven from the host system.
Amax-A16
AVD#
WE#
RDY
OE#
CLK
CE#
CLK may be at V
(1) (3)
t
t
AAVDS
AAVDS
t
t
t
CR
AVDP
WEA
Parameter
t
RC
(1) (2)
CAS
t
OEH
S29NS-S MirrorBit
= 150 ns), operating voltage V
t
AVDO
t
(1) (2)
AAVDH
IL
D a t a
or V
t
AAVDH
IL
Figure 10.10 Asynchronous Read
or Toggle
t
OE
S h e e t
®
Eclipse
CC
™
must be greater than 1.75V.
t
Flash Family
t
CE
ACC
( P r e l i m i n a r y )
AAVDH
OEZ
CEZ
Symbol
t
t
is satisfied so that output data from the Flash will not contend
t
AAVDS
AAVDH
t
t
t
t
t
AVDP
t
t
t
AVDO
ICCC
WEA
.
t
ACC
t
t
CAS
CEZ
OEZ
t
OEH
.
CE
RC
OE
CR
OEZ
.
210
t
AAVDH
Min
9.6
5.5
5.5
–
–
–
0
–
–
–
4
0
–
(4)
S29NS-S_00_02 April 20, 2009
Max
115
115
15
15
10
15
20
–
–
–
–
–
–
–
–
t
t
CEZ
OEZ
Unit
t
CEZ
ns