s29ns01gs Meet Spansion Inc., s29ns01gs Datasheet - Page 53

• Manufacturer Part Number: s29ns01gs
• Description: S29ns01gs 1024 Megabit 128 Megabyte 16-bit Data Width, Burst Access, Simultaneous Read/write, 1.8 Volt-only Flash Memory In 65 Nm Mirrorbit Technology
• Manufacturer: Meet Spansion Inc.

9.
9.1
9.2
9.3
April 20, 2009 S29NS-S_00_02
Power Conservation Modes
Standby Mode
Automatic Sleep Mode
Output Disable (OE#)
In the standby mode current consumption is greatly reduced, and the outputs (A/DQ15-A/DQ0) are placed in
the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when
the CE# and RESET# inputs are both held at V
t
the device draws active current until the operation is completed. I
standby current specification.
The automatic sleep mode minimizes Flash device energy consumption after read initial access time is
completed and while the device is not performing a program or erase operation. The device automatically
enables this mode when addresses remain stable for t
synchronous burst read. The automatic sleep mode is independent of the CE#, WE#, and OE# control
signals. Standard address access timings (t
in asynchronous mode sleep, output data is latched and always available to the system. While in
synchronous mode sleep, the burst data continues to be provided until the burst is terminated. I
Characteristics on page 55
When the OE# input is at V
impedance state. RDY is not controlled by OE#.
IA
) for read access, before it is ready to read data. If the device is deselected during erasure or programming,
D a t a
S h e e t
S29NS-S MirrorBit
IH
is the automatic sleep mode current specification.
, output (A/DQ15-A/DQ0) from the device is disabled and placed in the high
( P r e l i m i n a r y )
®
ACC
Eclipse
CC
or t
± 0.2 V. The device requires standard access time (t
IA
™
) provide new data when addresses are changed. While
Flash Family
ACC
+ 20 ns in asynchronous mode or after t
CC3
in
DC Characteristics on page 55
CC6
IA
in
of a
DC
CE
is the
or
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