mc68hc912d60c Freescale Semiconductor, Inc, mc68hc912d60c Datasheet - Page 101

• Manufacturer Part Number: mc68hc912d60c
• Description: Hc12 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

7.7.2 Normal Operation
7.7.3 Program/Erase Operation
7.8 Programming the Flash EEPROM
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor
The Flash EEPROM allows a byte or aligned word read in one bus cycle.
A misaligned word read requires an additional bus cycle. The Flash
EEPROM array responds to read operations only. Write operations are
ignored.
An unprogrammed Flash EEPROM bit has a logic state of one. A bit
must be programmed to change its state from one to zero. Erasing a bit
returns it to a logic one. The Flash EEPROM has a minimum
program/erase life of 100 cycles. Programming or erasing the Flash
EEPROM is accomplished by a series of control register writes.
The Flash EEPROM must be completely erased prior to programming
final data values.
Programming and erasing of Flash locations cannot be performed by
code being executed from the Flash memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Programming the Flash EEPROM is done on a row basis. A row consists
of 32 consecutive words (64 bytes) with rows starting from addresses
$XX00, $XX40, $XX80 and $XXC0. When writing a row care should be
taken not to write data to addresses outside of the row. Programming is
restricted to aligned word i.e. data writes to select rows/blocks for
programming/erase should be to even adresses and writes to any row
for programming should be to aligned words.
Flash Memory
FPGM
Programming the Flash EEPROM
maximum (40µs).
Technical Data
Flash Memory
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