tea1202ts NXP Semiconductors, tea1202ts Datasheet - Page 12

• Manufacturer Part Number: tea1202ts
• Description: Battery Power Unit
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2002 Mar 14
C
I
I
I
I
P
R
R
E
T
f
f
t
D
V
V
Low drop-out voltage regulators; note 8
V
V
V
V
V
q(DCDC)
shdwn
lim(max)
LX(max)
sw
i(sync)
start
SYMBOL
I
IMING
OWER
FFICIENCY
lL(n)
IH(n)
I(LDO1)
I(LDO2)
LDO
dropout
drop
URRENT LEVELS
DS(on)(N)
DS(on)(P)
IGITAL INPUT LEVELS
0.95 V starting power unit
lim
MOSFET
quiescent current at
pin UPOUT/DNIN
current in shut-down mode
maximum current limit
current limit deviation
maximum continuous current at
pins LX1 and LX2
drain-to-source on-state
resistance
drain-to-source on-state
resistance
efficiency upconversion
switching frequency
synchronization clock input
frequency
start-up time
LOW-level input voltage on all
digital pins
HIGH-level input voltage
output voltage range pin LDO1
output voltage range pin LDO2
output voltage range
drop-out voltage
minimum drop voltage for
functionality within specification
pin SYNC/PWM
pins SHDWN0 and SHDWN2
all other digital input pins
S
PARAMETER
note 3
V
I
T
NFET; I
T
PFET; I
T
see Fig.10; V
PWM mode
note 6
note 7
V
note 9
I
I
lim
LDO
LDO
amb
j
j
LBI1
LDO
upconversion
downconversion
V
V
I
I
= 27 C
= 27 C
LDO
LDO
set to 1.0 A; note 4
I
I
= 50 mA
= 150 mA
= 1.2 V; I
= 2.4 V; I
= 80 C
= V
< V
= 50 mA
= 150 mA
CONDITIONS
DS
DS
I(up)
4
12
= 100 mA;
+ 0.3 V
= 100 mA;
= 1.2 V
O
L
L
up to 3.3 V
= 100 mA
= 200 mA
480
6
0
0.55V
0.9
V
V
1.8
1.30
250
500
12
12
4
O(uvlo)
MIN.
0.4
4
110
65
5
110
125
84
92
600
13
10
30
90
TYP.
Preliminary specification
TEA1202TS
+12
+12
1.0
200
250
720
20
0.4
V
V
V
5.50
V
5.50
45
135
MAX.
4
4
4
4
+ 0.3 V
+ 0.3 V
+ 0.3 V
+ 0.3 V
A
%
%
A
m
m
%
%
kHz
MHz
ms
V
V
V
mV
mV
mV
mV
A
A
UNIT